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| NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P5504EDG TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 55m ID -21A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 SYMBOL VDS VGS LIMITS -40 20 -21 -13 -39 41 16 -55 to 150 UNITS V V TC = 25 C TC = 100 C ID IDM A TC = 25 C TC = 100 C PD Tj, Tstg W C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 SYMBOL RJC RJA TYPICAL MAXIMUM 3 75 UNITS C / W C / W Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 LIMITS UNIT MIN TYP MAX V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = -250A VDS = VGS, ID = -250A VDS = 0V, VGS = 20V VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V, TJ = 125 C VDS = -5V, VGS = -10V -40 -1.5 -2 -3 V 250 nA 1 10 A A -96 REV1.0 1 www.DataSheet.in Oct-12-2010 NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P5504EDG TO-252 Halogen-Free & Lead-Free Drain-Source On-State 1 Resistance Forward Transconductance 1 RDS(ON) gfs VGS = -4.5V, ID = -6A VGS = -10V, ID = -8A VDS = -10V, ID = -8A DYNAMIC 65 38 11 94 55 m S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 2 Ciss Coss Crss Qg Qgs Qgd 2 833 VGS = 0V, VDS = -10V, f = 1MHz 198 138 18 VDS = 0.5V(BR)DSS, VGS = -10V, ID = -8A 3.3 6.8 6.7 VDS = -20V, ID -1A, VGS = -10V, RGS = 6 9.7 19.8 12.3 13.4 19.4 35.6 22.2 nS nC pF Gate-Source Charge Gate-Drain Charge 2 2 Turn-On Delay Time Rise Time td(on) tr Turn-Off Delay Time Fall Time 2 2 td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 C) Continuous Current Pulsed Current 3 1 IS ISM VSD trr Qrr IF = -8A, VGS = 0V IF = -8A, dlF/dt = 100A / S 17 9 -21 -39 -1 A V nS nC Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 2 Pulse test : Pulse Width 300 sec, Duty Cycle 2. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REV1.0 2 www.DataSheet.in Oct-12-2010 NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P5504EDG TO-252 Halogen-Free & Lead-Free TYPICAL PERFORMANCE CHARACTERISTICS 100 -Is - Reverse Drain Current(A) V GS = 0V 10 T A = 125 C 1 0.1 25 C -55 C 0.01 0.001 0 0.4 0.2 0.6 0.8 1.0 1.2 -VSD - Body Diode Forward Voltage(V) 1.4 REV1.0 3 www.DataSheet.in Oct-12-2010 NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P5504EDG TO-252 Halogen-Free & Lead-Free REV1.0 4 www.DataSheet.in Oct-12-2010 |
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